Performance analysis of Heterojunction FinFET Inverter

Implementation plan:
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Step 1: Initially, we construct a FinFET inverter structure with rectangular fin using Si source/drain, Si₁₋ₓGeₓ channel, HfO₂ gate oxide, and polysilicon gate .

Step 2: Then, we apply the SiGe mole fraction, assign channel and drain doping concentrations for mobility.

Step 3: Next, we apply drain bias and sweep gate voltage to obtain the transfer characteristics (Id–Vg).

Step 4: Then, we fix gate voltage and sweep drain voltage to obtain the output characteristics (Id–Vd).

Step 5: Finally, we analyze Id–Vg and Id–Vd log data for different mole fraction values.

Software Requirements:
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1. Development Tool: Silvaco TCAD 2019 version

2. Operating System: Windows 10 (64-bit) or above

Note:
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1) If the implementation plan does not fully align with your requirements, please provide all necessary details—including steps, parameters, models, and expected outcomes—in advance. Kindly ensure that any missing configurations or specifications are clearly outlined in the plan before confirming, as post-implementation changes will not be accommodated.

2) If there’s no built-in solution for what the project needs, we can always turn to reference models, customize our own, different math models or write the code ourselves to fulfil the process.

3) If the plan satisfies your requirement, Please confirm with us.

4) Project based on Simulation only.

5) if you need any specific version to use then kindly provide Access credentials like Id, password, license keys and software files like that , otherwise we use the available 2019 version only.