Performance analysis of spacer engineered GS SOI FinFET

Implementation plan:

Step 1: Initially, we construct a hybrid state-space based 3D GS SOI-FinFET model including gate stack and high-K spacer parameters.

Step 2: Then, we simulate the model to generate and collect electrical characteristic data.

Step 3: Then, we form three configurations (baseline, gate-stack, gate-stack with spacer) and compute transfer and output characteristics based on collected data.

Step 4: Next, we perform channel doping and evaluate switching and leakage behavior using computed results.

Step 5: Next, we extract analog and RF performance factors such as gm, SS, ON/OFF ratio, gain, and frequency factors from the processed simulation data.

Step 6: Finally, we plot performance for the following metrics:

6.1 : Time Vs. Voltage (V)
6.2 : Time Vs. Current (A)
6.3 : Time Vs. Gain (Units)
6.4 : Time Vs. Frequency (Hz)

Software Requirements:

1. Development Tool: Silvaco TCAD with Python (only for data analysis and clear visualizations)
2. Operating System: Windows 10 (64-bit) or above

Note

1) If the implementation plan does not fully align with your requirements, please provide all necessary details—including steps, parameters, models, and expected outcomes—in advance. Kindly ensure that any missing configurations or specifications are clearly outlined in the plan before confirming, as post-implementation changes will not be accommodated.

2) If there’s no built-in solution for what the project needs, we can always turn to reference models, customize our own, different math models or write the code ourselves to fulfil the process.

3) If the plan satisfies your requirement, Please confirm with us.

4) Project based on Simulation only.